VBsemi Elec FDMA291P-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDMA291P-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)50nC@8V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation19W
RDS(on)40mΩ@2.5V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 20V 10A 19W Surface Mount DFN-6(2x2)

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