VBsemi Elec FDG6322C-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDG6322C-VB

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Specifications

Gate Charge(Qg)1.25nC@4.5V;1.2nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.28A;2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation1.24W;1.1W
RDS(on)90mΩ@4.5V;155mΩ@4.5V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 3.28A 1.24W Surface Mount SC-70-6

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