VBsemi Elec · FETs & Power MOSFETs · MPN FDG316P-VB
No reviews yet — be the first to review VBsemi Elec FDG316P-VB.
| Gate Charge(Qg) | 12.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 20V 4A 2.8W Surface Mount SC-70-6