VBsemi Elec · FETs & Power MOSFETs · MPN FDD86252-VB
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| Gate Charge(Qg) | 23nC |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 45mΩ@8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.735nF |
| Type | N-Channel |
N-Channel 150V 40A 20W Surface Mount TO-252