VBsemi Elec · FETs & Power MOSFETs · MPN FDD8424H-VB
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 310nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 108W |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2.248nF |
40V 50A 1V 108W 14mΩ@10V 1 N-Channel + 1 P-Channel TO-252-4L Single FETs, MOSFETs RoHS