VBsemi Elec FDD6N25TM-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDD6N25TM-VB

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)77pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)640mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)260pF
TypeN-Channel

Technical details

N-Channel 250V 4.5A 45W Surface Mount TO-252

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