VBsemi Elec · FETs & Power MOSFETs · MPN FDC658P-VB
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| Gate Charge(Qg) | 5.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.8A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 49mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 450pF |
| Type | P-Channel |
P-Channel 30V 4.8A Surface Mount TSOP-6