VBsemi Elec · FETs & Power MOSFETs · MPN FDC655BN-VB
No reviews yet — be the first to review VBsemi Elec FDC655BN-VB.
| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 23mΩ@10V;27mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 424pF |
| Type | N-Channel |
N-Channel 30V 6A 2.5W Surface Mount TSOP-6