VBsemi Elec FDC654P-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDC654P-VB

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.8A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)49mΩ@10V;54mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)450pF
TypeP-Channel

Technical details

P-Channel 30V 4.8A Surface Mount TSOP-6

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