VBsemi Elec · FETs & Power MOSFETs · MPN FDC6302P-VB
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| Output Capacitance(Coss) | 45pF |
|---|---|
| Pd - Power Dissipation | 1.4W |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 2.7nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 75mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 210pF |
1.4W 20V 2V 75mΩ@4.5V 2 P-Channel P-Channel TSOP-6 Single FETs, MOSFETs RoHS