VBsemi Elec · FETs & Power MOSFETs · MPN FDC6301N-VB
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| Gate Charge(Qg) | 3.7nC@10V;1.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 22mΩ@4.5V;28mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
| Type | N-Channel |
N-Channel 20V 6A 1.6W Surface Mount TSOP-6