VBsemi Elec · FETs & Power MOSFETs · MPN FDC2612-VB
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| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| RDS(on) | 160mΩ@10V;200mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
N-Channel 200V 4A 5W Surface Mount TSOP-6