VBsemi Elec FDB3632-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDB3632-VB

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Specifications

Configuration-
Gate Charge(Qg)110nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

N-Channel 100V 140A 375W Surface Mount TO-263(D2PAK)

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