VBsemi Elec FDB2532-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FDB2532-VB

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Specifications

Configuration-
Gate Charge(Qg)63nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation378W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)15mΩ@10V;17mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)4.5nF

Technical details

N-Channel 150V 80A 378W Surface Mount TO-263(D2PAK)

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