VBsemi Elec · FETs & Power MOSFETs · MPN FDB15N50-VB
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| Gate Charge(Qg) | 106nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.322nF |
| Type | N-Channel |
N-Channel 650V 16A 208W Surface Mount TO-263(D2Pak)