VBsemi Elec FCPF20N60-VB

VBsemi Elec · FETs & Power MOSFETs · MPN FCPF20N60-VB

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Specifications

Gate Charge(Qg)106nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.322nF
TypeN-Channel

Technical details

N-Channel 650V 13A 200W Through Hole TO-220F

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