VBsemi Elec · FETs & Power MOSFETs · MPN EMB17A03G-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10.2nC@5V |
| Output Capacitance(Coss) | 175pF |
| Current - Continuous Drain(Id) | 13.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 4.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 641pF |
| Type | N-Channel |
N-Channel 30V 13.5A 4.1W Surface Mount SO-8