VBsemi Elec EM6M2T2R-VB

VBsemi Elec · FETs & Power MOSFETs · MPN EM6M2T2R-VB

No reviews yet — be the first to review VBsemi Elec EM6M2T2R-VB.

Specifications

Gate Charge(Qg)2.1nC@5V;2.4nC@5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)600mA;300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV;800mV
Pd - Power Dissipation1.15W
RDS(on)270mΩ@4.5V;660mΩ@4.5V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 600mA 1.15W Surface Mount SC-75-6

Related FETs & Power MOSFETs