VBsemi Elec DTS6504-VB

VBsemi Elec · FETs & Power MOSFETs · MPN DTS6504-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.2nC@10V;4.2nC@4.5V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
RDS(on)23mΩ@10V;27mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)424pF
TypeN-Channel

Technical details

N-Channel 30V 4.5A 2.5W Surface Mount SC-70-6

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