VBsemi Elec · FETs & Power MOSFETs · MPN DTS2012-VB
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| Gate Charge(Qg) | 13.5nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 48mΩ@2.5V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 20V 4A 2.8W Surface Mount SOT-323(SC-70)