VBsemi Elec DTS1004-VB

VBsemi Elec · FETs & Power MOSFETs · MPN DTS1004-VB

No reviews yet — be the first to review VBsemi Elec DTS1004-VB.

Specifications

Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)240mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

N-Channel 100V 2A 2.5W Surface Mount SOT-23(TO-236)

Related FETs & Power MOSFETs