VBsemi Elec · FETs & Power MOSFETs · MPN DMS3019SSD-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 15nC@10V;3.7nC@4.5V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 8mΩ@10V;12mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 586pF |
| Type | N-Channel |
30V 8A 2.7W 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS