VBsemi Elec DMP3030SN-7-VB

VBsemi Elec · FETs & Power MOSFETs · MPN DMP3030SN-7-VB

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Specifications

Gate Charge(Qg)11.4nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.6A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)54mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.295nF
TypeP-Channel

Technical details

30V 5.6A 2V 2.5W 54mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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