VBsemi Elec DMP2006UFGQ-7-VB

VBsemi Elec · FETs & Power MOSFETs · MPN DMP2006UFGQ-7-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)95.3nC@10V
Output Capacitance(Coss)910pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)813pF
RDS(on)4mΩ@10V;6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.595nF
TypeP-Channel

Technical details

20V 52A 2.2V 54W 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS

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