VBsemi Elec DMG1013T-VB

VBsemi Elec · FETs & Power MOSFETs · MPN DMG1013T-VB

No reviews yet — be the first to review VBsemi Elec DMG1013T-VB.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.65nC@4.5V
Current - Continuous Drain(Id)550mA
Output Capacitance(Coss)15pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation190mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)450mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)45pF
TypeP-Channel

Technical details

P-Channel 20V 550mA 190mW Surface Mount SC-75-3

Related FETs & Power MOSFETs