VBsemi Elec CSD87502Q2T-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD87502Q2T-VB

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Output Capacitance(Coss)117pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)22mΩ@10V;26mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)886pF
TypeN-Channel

Technical details

30V 5.8A 2.5V 2.7W 2 N-Channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS

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