VBsemi Elec CSD19505KCS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD19505KCS-VB

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Specifications

Gate Charge(Qg)141nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)3.25nF
Current - Continuous Drain(Id)195A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)348pF
RDS(on)3mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)7.91nF
TypeN-Channel

Technical details

N-Channel 80V 195A 375W Through Hole TO-220

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