VBsemi Elec CSD18534KCS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD18534KCS-VB

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)570pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.8nF
TypeN-Channel

Technical details

N-Channel 60V 120A 136W Through Hole TO-220AB

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