VBsemi Elec CSD18532NQ5B-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD18532NQ5B-VB

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.65nF
TypeN-Channel

Technical details

N-Channel 60V 100A 136W Surface Mount DFN5x6-8

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