VBsemi Elec CSD18532KCS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD18532KCS-VB

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Specifications

Gate Charge(Qg)180nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)210A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)750pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.3nF
TypeN-Channel

Technical details

N-Channel 60V 210A 375W Through Hole TO-220AB

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