VBsemi Elec CSD18502KCS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD18502KCS-VB

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Specifications

Configuration-
Gate Charge(Qg)120nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9nF

Technical details

N-Channel 40V 180A 312W Through Hole TO-220AB

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