VBsemi Elec CSD17581Q3AT-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD17581Q3AT-VB

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Specifications

Gate Charge(Qg)33.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)5mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)6nF
TypeN-Channel

Technical details

N-Channel 30V 60A 52W Surface Mount DFN-8(3x3)

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