VBsemi Elec CSD17576Q5B-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD17576Q5B-VB

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Specifications

Gate Charge(Qg)81.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.225nF
Current - Continuous Drain(Id)128A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation175W
RDS(on)1.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)171pF
Number1 N-channel
Input Capacitance(Ciss)6.265nF
TypeN-Channel

Technical details

N-Channel 30V 128A 175W Surface Mount DFN5x6-8

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