VBsemi Elec · FETs & Power MOSFETs · MPN CSD16406Q3-VB
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| Gate Charge(Qg) | 33.5nC@4.5V;69nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 406pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 4mΩ@4.5V;5mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
| Type | N-Channel |
N-Channel 30V 60A 52W Surface Mount DFN3x3-8