VBsemi Elec CSD16327Q3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CSD16327Q3-VB

No reviews yet — be the first to review VBsemi Elec CSD16327Q3-VB.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)257nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)1.725nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)2.5mΩ@2.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 20V 100A 250W Surface Mount DFN3x3-8

Related FETs & Power MOSFETs