VBsemi Elec CMU06N02-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CMU06N02-VB

No reviews yet — be the first to review VBsemi Elec CMU06N02-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)171nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)710pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
RDS(on)3.5mΩ@10V;4.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 30V 100A 250W Through Hole TO-251

Related FETs & Power MOSFETs