VBsemi Elec CES2362-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CES2362-VB

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Specifications

Gate Charge(Qg)4.2nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.66W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)75mΩ@10V;86mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 60V 4A 1.66W Surface Mount SOT-23(TO-236)

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