VBsemi Elec · FETs & Power MOSFETs · MPN CED12N10-VB
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 892pF |
| Type | N-Channel |
N-Channel 100V 15A 61W Through Hole TO-251