VBsemi Elec · FETs & Power MOSFETs · MPN CEB50P03-VB
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| Gate Charge(Qg) | 115nC@10V;56nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 570pF |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.55nF |
| Type | P-Channel |
P-Channel 30V 75A 250W Surface Mount TO-263(D2PAK)