VBsemi Elec CEA6426-VB

VBsemi Elec · FETs & Power MOSFETs · MPN CEA6426-VB

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation5.3W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)76mΩ@10V;88mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 60V 5.5A 5.3W Surface Mount SOT-89

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