VBsemi Elec BVSS123LT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BVSS123LT1G-VB

No reviews yet — be the first to review VBsemi Elec BVSS123LT1G-VB.

Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)7pF
Current - Continuous Drain(Id)260mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF
TypeN-Channel

Technical details

N-Channel 100V 260mA 0.37W Surface Mount SOT-23(TO-236)

Related FETs & Power MOSFETs