VBsemi Elec BUZ21-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BUZ21-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)28nC@10V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)127mΩ@10V
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 100V 18A 105W Through Hole TO-220AB

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