VBsemi Elec BUK762R0-40C-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BUK762R0-40C-VB

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Specifications

Output Capacitance(Coss)1.15nF
Pd - Power Dissipation312W
Configuration-
Gate Charge(Qg)160nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)850pF
Number1 N-channel
Input Capacitance(Ciss)9.335nF

Technical details

312W 40V 1.2V 1mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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