VBsemi Elec · FETs & Power MOSFETs · MPN BUK755R4-100E-VB
No reviews yet — be the first to review VBsemi Elec BUK755R4-100E-VB.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Output Capacitance(Coss) | 2.025nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 5mΩ@10V |
| Input Capacitance(Ciss) | 10nF |
| Type | N-Channel |
N-Channel 100V 120A 120W Through Hole TO-220AB