VBsemi Elec BUK436-100A.-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BUK436-100A.-VB

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)35mΩ@10V
Input Capacitance(Ciss)5.1nF
TypeN-Channel

Technical details

N-Channel 100V 85A 3.75W Through Hole TO-247AC

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