VBsemi Elec BSZ019N03LS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSZ019N03LS-VB

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.04nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)79pF
RDS(on)1.8mΩ@10V;2.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.05nF
TypeN-Channel

Technical details

N-Channel 30V 70A 52W Surface Mount DFN3x3-8

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