VBsemi Elec · FETs & Power MOSFETs · MPN BSZ018NE2LSIATMA1-VB
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| Gate Charge(Qg) | 171nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 2mΩ@4.5V;2.5mΩ@2.5V |
| Number | 1 N-channel |
| Type | N-Channel |
20V 100A 1V 250W 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS