VBsemi Elec BSV236SP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSV236SP-VB

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Specifications

Gate Charge(Qg)12.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.6W
RDS(on)34mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 20V 4A 1.6W Surface Mount SC-70-6

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