VBsemi Elec BSS131H6327-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSS131H6327-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)600pC@4.5V
Current - Continuous Drain(Id)250mA
Output Capacitance(Coss)5pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation130mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 60V 250mA 0.13W Surface Mount SOT-23

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