VBsemi Elec BSS119N-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSS119N-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)5.2nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)240mΩ@10V
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

N-Channel 100V 2A 2.5W Surface Mount SOT-23(TO-236)

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